Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
China
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 62.50
€ 0.25 Each (Supplied on a Reel) (Exc. VAT)
€ 73.75
€ 0.295 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
€ 62.50
€ 0.25 Each (Supplied on a Reel) (Exc. VAT)
€ 73.75
€ 0.295 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
250 - 950 | € 0.25 | € 12.50 |
1000 - 1950 | € 0.25 | € 12.50 |
2000 - 2950 | € 0.25 | € 12.50 |
3000+ | € 0.25 | € 12.50 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
8.6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Country of Origin
China
Product details