Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
3.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.7mm
Typical Gate Charge @ Vgs
47.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Country of Origin
Taiwan, Province Of China
Product details
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 1,725.00
€ 0.69 Each (On a Reel of 2500) (Exc. VAT)
€ 2,035.50
€ 0.814 Each (On a Reel of 2500) (inc. VAT)
2500
€ 1,725.00
€ 0.69 Each (On a Reel of 2500) (Exc. VAT)
€ 2,035.50
€ 0.814 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
3.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.7mm
Typical Gate Charge @ Vgs
47.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Country of Origin
Taiwan, Province Of China
Product details