Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 85.00
€ 1.70 Each (Supplied as a Tape) (Exc. VAT)
€ 100.30
€ 2.006 Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
50
€ 85.00
€ 1.70 Each (Supplied as a Tape) (Exc. VAT)
€ 100.30
€ 2.006 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tape)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 50 - 95 | € 1.70 | € 8.50 |
| 100 - 245 | € 1.36 | € 6.80 |
| 250 - 495 | € 1.29 | € 6.45 |
| 500+ | € 1.29 | € 6.45 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
260 mA
Maximum Drain Source Voltage
240 V
Package Type
E-Line
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-40 V, +40 V
Maximum Operating Temperature
+150 °C
Width
2.41mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.77mm
Height
4.01mm
Minimum Operating Temperature
-55 °C
Product details


