Fairchild ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
Technical Document
Specifications
Maximum Continuous Collector Current
46 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
250 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 62.40
€ 6.24 Each (Supplied on a Reel) (Exc. VAT)
€ 73.63
€ 7.363 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
€ 62.40
€ 6.24 Each (Supplied on a Reel) (Exc. VAT)
€ 73.63
€ 7.363 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 95 | € 6.24 | € 31.20 |
| 100 - 245 | € 5.08 | € 25.40 |
| 250 - 495 | € 4.85 | € 24.25 |
| 500+ | € 4.67 | € 23.35 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Maximum Continuous Collector Current
46 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
250 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products