Infineon BCV62CE6327HTSA1 Dual PNP Transistor, -100 mA, -30 V, 4-Pin SOT-143

RS Stock No.: 827-0099Brand: InfineonManufacturers Part No.: BCV62CE6327HTSA1
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Technical Document

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-100 mA

Maximum Collector Emitter Voltage

-30 V

Package Type

SOT-143

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Minimum DC Current Gain

420

Transistor Configuration

Current Mirror

Maximum Collector Base Voltage

30 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

250 MHz

Pin Count

4

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 0.9mm

Product details

General Purpose PNP Transistors, Infineon

Bipolar Transistors, Infineon

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P.O.A.

Infineon BCV62CE6327HTSA1 Dual PNP Transistor, -100 mA, -30 V, 4-Pin SOT-143

P.O.A.

Infineon BCV62CE6327HTSA1 Dual PNP Transistor, -100 mA, -30 V, 4-Pin SOT-143
Stock information temporarily unavailable.

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Technical Document

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-100 mA

Maximum Collector Emitter Voltage

-30 V

Package Type

SOT-143

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Minimum DC Current Gain

420

Transistor Configuration

Current Mirror

Maximum Collector Base Voltage

30 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

250 MHz

Pin Count

4

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 0.9mm

Product details

General Purpose PNP Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more