Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
137 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 34.40
€ 3.44 Each (In a Pack of 10) (Exc. VAT)
€ 40.59
€ 4.059 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 34.40
€ 3.44 Each (In a Pack of 10) (Exc. VAT)
€ 40.59
€ 4.059 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 3.44 | € 34.40 |
| 50 - 90 | € 3.31 | € 33.10 |
| 100 - 240 | € 3.22 | € 32.20 |
| 250 - 490 | € 3.12 | € 31.20 |
| 500+ | € 2.93 | € 29.30 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
137 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.35mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
37 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products