N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1

RS Stock No.: 178-7495Brand: InfineonManufacturers Part No.: BSC070N10NS3GATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Width

5.35mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Height

1.1mm

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 1.76

Each (On a Reel of 5000) (Exc. Vat)

€ 2.077

Each (On a Reel of 5000) (Including VAT)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1

€ 1.76

Each (On a Reel of 5000) (Exc. Vat)

€ 2.077

Each (On a Reel of 5000) (Including VAT)

N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Number of Elements per Chip

1

Width

5.35mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Height

1.1mm

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.