N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1

RS Stock No.: 178-7507Brand: InfineonManufacturers Part No.: BSS138NH6433XTMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 0.09

Each (On a Reel of 10000) (Exc. Vat)

€ 0.106

Each (On a Reel of 10000) (Including VAT)

N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1

€ 0.09

Each (On a Reel of 10000) (Exc. Vat)

€ 0.106

Each (On a Reel of 10000) (Including VAT)

N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
10000 - 10000€ 0.09€ 900.00
20000 - 20000€ 0.09€ 900.00
30000+€ 0.09€ 900.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Series

SIPMOS

Minimum Operating Temperature

-55 °C

Product details

Infineon SIPMOS® N-Channel MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.