Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole

RS Stock No.: 110-7783Brand: InfineonManufacturers Part No.: IKP15N60TXKSA1
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Technical Document

Specifications

Maximum Continuous Collector Current

26 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

130 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+175 °C

Energy Rating

0.81mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

860pF

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

€ 2.89

Each (In a Pack of 10) (Exc. Vat)

€ 3.41

Each (In a Pack of 10) (Including VAT)

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
Select packaging type

€ 2.89

Each (In a Pack of 10) (Exc. Vat)

€ 3.41

Each (In a Pack of 10) (Including VAT)

Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 40€ 2.89€ 28.90
50 - 90€ 2.80€ 28.00
100 - 240€ 2.71€ 27.10
250 - 490€ 2.62€ 26.20
500+€ 2.47€ 24.70

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Technical Document

Specifications

Maximum Continuous Collector Current

26 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

130 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+175 °C

Energy Rating

0.81mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

860pF

Product details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.