Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 162-3284Brand: InfineonManufacturers Part No.: IKQ50N120CT2XKSA1
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Technical Document

Specifications

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

652 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Switching Speed

20kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3270pF

Maximum Operating Temperature

+175 °C

Energy Rating

7.1mJ

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P.O.A.

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

P.O.A.

Infineon IKQ50N120CT2XKSA1, P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

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Technical Document

Specifications

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

652 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Switching Speed

20kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3270pF

Maximum Operating Temperature

+175 °C

Energy Rating

7.1mJ