Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Switching Speed
20kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3270pF
Maximum Operating Temperature
+175 °C
Energy Rating
7.1mJ
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P.O.A.
30
P.O.A.
30
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
3
Switching Speed
20kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3270pF
Maximum Operating Temperature
+175 °C
Energy Rating
7.1mJ