Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 1.61
Each (In a Pack of 5) (Exc. Vat)
€ 1.90
Each (In a Pack of 5) (Including VAT)
Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Select packaging type
5
€ 1.61
Each (In a Pack of 5) (Exc. Vat)
€ 1.90
Each (In a Pack of 5) (Including VAT)
Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.61 | € 8.05 |
50 - 120 | € 1.46 | € 7.30 |
125 - 245 | € 1.40 | € 7.00 |
250 - 495 | € 1.31 | € 6.55 |
500+ | € 0.68 | € 3.40 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC