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N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1

RS Stock No.: 214-4395Brand: InfineonManufacturers Part No.: IPD80R1K4CEATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

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€ 0.98

Each (On a Reel of 2500) (Exc. VAT)

€ 1.156

Each (On a Reel of 2500) (inc. VAT)

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1

€ 0.98

Each (On a Reel of 2500) (Exc. VAT)

€ 1.156

Each (On a Reel of 2500) (inc. VAT)

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Maximum Gate Threshold Voltage

3.9V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more