Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.061 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
2
Transistor Material
Si
P.O.A.
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
20
P.O.A.
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
20
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.061 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
2
Transistor Material
Si