N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

RS Stock No.: 170-2318Brand: InfineonManufacturers Part No.: IPT012N08N5ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Width

10.58mm

Number of Elements per Chip

1

Height

2.4mm

Series

IPT012N08N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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P.O.A.

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

P.O.A.

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Width

10.58mm

Number of Elements per Chip

1

Height

2.4mm

Series

IPT012N08N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V