Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Width
10.58mm
Series
IPT015N10N5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.4mm
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€ 6.97
Each (In a Pack of 5) (Exc. Vat)
€ 8.225
Each (In a Pack of 5) (Including VAT)
5
€ 6.97
Each (In a Pack of 5) (Exc. Vat)
€ 8.225
Each (In a Pack of 5) (Including VAT)
5
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.1mm
Typical Gate Charge @ Vgs
169 nC @ 10 V
Width
10.58mm
Series
IPT015N10N5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.4mm