N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1

RS Stock No.: 171-1991Brand: InfineonManufacturers Part No.: IPT015N10N5ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

169 nC @ 10 V

Width

10.58mm

Series

IPT015N10N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.4mm

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€ 6.97

Each (In a Pack of 5) (Exc. Vat)

€ 8.225

Each (In a Pack of 5) (Including VAT)

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1
Select packaging type

€ 6.97

Each (In a Pack of 5) (Exc. Vat)

€ 8.225

Each (In a Pack of 5) (Including VAT)

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT015N10N5ATMA1
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

169 nC @ 10 V

Width

10.58mm

Series

IPT015N10N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.4mm