Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
81 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.45V
Number of Elements per Chip
1
Transistor Material
Silicon
€ 7,584.00
€ 1.58 Each (On a Reel of 4800) (Exc. VAT)
€ 8,949.12
€ 1.864 Each (On a Reel of 4800) (inc. VAT)
4800
€ 7,584.00
€ 1.58 Each (On a Reel of 4800) (Exc. VAT)
€ 8,949.12
€ 1.864 Each (On a Reel of 4800) (inc. VAT)
4800
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
81 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.45V
Number of Elements per Chip
1
Transistor Material
Silicon