Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Height
1.5mm
Series
IRF7205PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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P.O.A.
4000
P.O.A.
4000
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
4.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Height
1.5mm
Series
IRF7205PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V