P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

RS Stock No.: 170-2262Brand: InfineonManufacturers Part No.: IRFR5305TRLPBF
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7.49mm

Number of Elements per Chip

1

Height

2.39mm

Series

IRFR5305PBF

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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€ 0.83

Each (On a Reel of 3000) (Exc. Vat)

€ 0.979

Each (On a Reel of 3000) (Including VAT)

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

€ 0.83

Each (On a Reel of 3000) (Exc. Vat)

€ 0.979

Each (On a Reel of 3000) (Including VAT)

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7.49mm

Number of Elements per Chip

1

Height

2.39mm

Series

IRFR5305PBF

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V