Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0058 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
P.O.A.
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
10
P.O.A.
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
10
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0058 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si