Infineon IRG4BC20KDSTRLP IGBT, 16 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.: 915-5067PBrand: InfineonManufacturers Part No.: IRG4BC20KDSTRLP
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Technical Document

Specifications

Maximum Continuous Collector Current

16 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

60 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 11.3 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Energy Rating

0.96mJ

Product details

Single IGBT up to 20A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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P.O.A.

Infineon IRG4BC20KDSTRLP IGBT, 16 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
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P.O.A.

Infineon IRG4BC20KDSTRLP IGBT, 16 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Maximum Continuous Collector Current

16 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

60 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.67 x 11.3 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Energy Rating

0.96mJ

Product details

Single IGBT up to 20A, Infineon

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.