Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.89 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.31mm
Length
20.29mm
Typical Gate Charge @ Vgs
245 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
26.59mm
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 839.25
€ 33.57 Each (In a Tube of 25) (Exc. VAT)
€ 990.31
€ 39.613 Each (In a Tube of 25) (inc. VAT)
25
€ 839.25
€ 33.57 Each (In a Tube of 25) (Exc. VAT)
€ 990.31
€ 39.613 Each (In a Tube of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.89 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.31mm
Length
20.29mm
Typical Gate Charge @ Vgs
245 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
26.59mm
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS