IXYS HiperFET, Polar N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247AD IXFH44N50P
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
650 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
98 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 21.66
€ 21.66 Each (Exc. VAT)
€ 25.56
€ 25.56 Each (inc. VAT)
Standard
1
€ 21.66
€ 21.66 Each (Exc. VAT)
€ 25.56
€ 25.56 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 5 | € 21.66 |
| 6 - 14 | € 18.95 |
| 15+ | € 18.32 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
650 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
98 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products