IXYS HiperFET, Polar N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 85.40
€ 8.54 Each (Supplied in a Tube) (Exc. VAT)
€ 100.77
€ 10.08 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
€ 85.40
€ 8.54 Each (Supplied in a Tube) (Exc. VAT)
€ 100.77
€ 10.08 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 10 - 24 | € 8.54 |
| 25+ | € 7.44 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products