Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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€ 1.55
Each (In a Tube of 10) (Exc. Vat)
€ 1.829
Each (In a Tube of 10) (Including VAT)
10
€ 1.55
Each (In a Tube of 10) (Exc. Vat)
€ 1.829
Each (In a Tube of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 40 | € 1.55 | € 15.50 |
50 - 90 | € 1.43 | € 14.30 |
100 - 240 | € 1.37 | € 13.70 |
250 - 490 | € 1.28 | € 12.80 |
500+ | € 1.19 | € 11.90 |
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.