Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
€ 164.00
€ 0.41 Each (Supplied on a Reel) (Exc. VAT)
€ 193.52
€ 0.484 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
400
€ 164.00
€ 0.41 Each (Supplied on a Reel) (Exc. VAT)
€ 193.52
€ 0.484 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
400
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 400 - 760 | € 0.41 | € 16.40 |
| 800+ | € 0.38 | € 15.20 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
320 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
0.72 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details


