NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 to 7mA, 3-Pin SOT-23

RS Stock No.: 166-0537Brand: NXPManufacturers Part No.: BF556A,215
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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

3 to 7mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 to 7mA, 3-Pin SOT-23

P.O.A.

NXP BF556A,215 N-Channel JFET, 30 V, Idss 3 to 7mA, 3-Pin SOT-23
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

3 to 7mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Height

1mm

Width

1.4mm

Minimum Operating Temperature

-65 °C

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.