Technical Document
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
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P.O.A.
3000
P.O.A.
3000
Technical Document
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
Country of Origin
China
Product details