onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole

RS Stock No.: 178-4627PBrand: onsemiManufacturers Part No.: FGH60T65SQD-F155
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

333 W

Package Type

TO-247 G03

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

Energy Rating

50mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

3813pF

Country of Origin

China

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€ 5.12

Each (Supplied in a Tube) (Exc. Vat)

€ 6.042

Each (Supplied in a Tube) (Including VAT)

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
Select packaging type

€ 5.12

Each (Supplied in a Tube) (Exc. Vat)

€ 6.042

Each (Supplied in a Tube) (Including VAT)

onsemi FGH60T65SQD-F155, P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03, Through Hole
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

333 W

Package Type

TO-247 G03

Mounting Type

Through Hole

Channel Type

P

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Maximum Operating Temperature

+175 °C

Energy Rating

50mJ

Minimum Operating Temperature

-55 °C

Gate Capacitance

3813pF

Country of Origin

China