onsemi MMBF4391 N-Channel JFET, 0.4 V, Idss 50 → 150mA, 3-Pin SOT-23

RS Stock No.: 806-4267PBrand: ON SemiconductorManufacturers Part No.: MMBF4391
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Technical Document

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

50 → 150mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

30 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi MMBF4391 N-Channel JFET, 0.4 V, Idss 50 → 150mA, 3-Pin SOT-23
Select packaging type

P.O.A.

onsemi MMBF4391 N-Channel JFET, 0.4 V, Idss 50 → 150mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

50 → 150mA

Maximum Drain Source Voltage

0.4 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

30 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.