onsemi MMBFJ270 P-Channel JFET, 15 V, Idss -2 to -15mA, 3-Pin SOT-23

RS Stock No.: 806-4318Brand: onsemiManufacturers Part No.: MMBFJ270
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

-2 to -15mA

Maximum Drain Source Voltage

15 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 1.04mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.04mm

Width

1.3mm

Product details

P-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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€ 0.54

Each (In a Pack of 50) (Exc. Vat)

€ 0.637

Each (In a Pack of 50) (Including VAT)

onsemi MMBFJ270 P-Channel JFET, 15 V, Idss -2 to -15mA, 3-Pin SOT-23
Select packaging type

€ 0.54

Each (In a Pack of 50) (Exc. Vat)

€ 0.637

Each (In a Pack of 50) (Including VAT)

onsemi MMBFJ270 P-Channel JFET, 15 V, Idss -2 to -15mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
50 - 50€ 0.54€ 27.00
100 - 950€ 0.33€ 16.50
1000 - 2950€ 0.24€ 12.00
3000 - 8950€ 0.21€ 10.50
9000+€ 0.18€ 9.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

-2 to -15mA

Maximum Drain Source Voltage

15 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 1.04mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.04mm

Width

1.3mm

Product details

P-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.