N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NTMFS6H818NT1G

RS Stock No.: 178-4316Brand: onsemiManufacturers Part No.: NTMFS6H818NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia

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€ 3.69

Each (On a Reel of 1500) (Exc. Vat)

€ 4.354

Each (On a Reel of 1500) (Including VAT)

N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NTMFS6H818NT1G

€ 3.69

Each (On a Reel of 1500) (Exc. Vat)

€ 4.354

Each (On a Reel of 1500) (Including VAT)

N-Channel MOSFET, 123 A, 80 V, 5-Pin DFN onsemi NTMFS6H818NT1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

123 A

Maximum Drain Source Voltage

80 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia