Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
400 mW
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
5.5 nC @ 4 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
P.O.A.
Each (In a Pack of 2) (Exc. VAT)
2
P.O.A.
Each (In a Pack of 2) (Exc. VAT)
2
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
400 mW
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
5.5 nC @ 4 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
MOSFETs - P-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.