Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NLT1G

RS Stock No.: 178-4299Brand: onsemiManufacturers Part No.: NVMFD5C478NLT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

8.1 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia

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€ 1.49

Each (On a Reel of 1500) (Exc. Vat)

€ 1.758

Each (On a Reel of 1500) (Including VAT)

Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NLT1G

€ 1.49

Each (On a Reel of 1500) (Exc. Vat)

€ 1.758

Each (On a Reel of 1500) (Including VAT)

Dual N-Channel MOSFET, 29 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NLT1G
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

8.1 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia