Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 180.00
€ 0.06 Each (On a Reel of 3000) (Exc. VAT)
€ 212.40
€ 0.071 Each (On a Reel of 3000) (inc. VAT)
3000
€ 180.00
€ 0.06 Each (On a Reel of 3000) (Exc. VAT)
€ 212.40
€ 0.071 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 6000 | € 0.06 | € 180.00 |
| 9000+ | € 0.06 | € 180.00 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details


