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onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G

RS Stock No.: 103-2965Brand: onsemiManufacturers Part No.: BSS138LT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 50V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

€ 270.00

€ 0.09 Each (On a Reel of 3000) (Exc. VAT)

€ 318.60

€ 0.106 Each (On a Reel of 3000) (inc. VAT)

onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G

€ 270.00

€ 0.09 Each (On a Reel of 3000) (Exc. VAT)

€ 318.60

€ 0.106 Each (On a Reel of 3000) (inc. VAT)

onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Reel
3000 - 12000€ 0.09€ 270.00
15000+€ 0.09€ 270.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 50V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more