Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.67 x 9.65 x 4.83mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
10
P.O.A.
Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
400 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.67 x 9.65 x 4.83mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


