onsemi P-Channel MOSFET, 6.7 A, 20 V, 8-Pin ChipFET NTHS4101PT1G
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V dc
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 7.60
€ 0.76 Each (In a Pack of 10) (Exc. VAT)
€ 8.97
€ 0.897 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 7.60
€ 0.76 Each (In a Pack of 10) (Exc. VAT)
€ 8.97
€ 0.897 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 0.76 | € 7.60 |
| 50 - 190 | € 0.73 | € 7.30 |
| 200 - 490 | € 0.50 | € 5.00 |
| 500+ | € 0.50 | € 5.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
6.7 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V dc
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products