onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 7.90
€ 0.79 Each (Supplied as a Tape) (Exc. VAT)
€ 9.32
€ 0.932 Each (Supplied as a Tape) (inc. VAT)
Standard
10
€ 7.90
€ 0.79 Each (Supplied as a Tape) (Exc. VAT)
€ 9.32
€ 0.932 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 10 - 90 | € 0.79 | € 7.90 |
| 100 - 240 | € 0.69 | € 6.90 |
| 250 - 490 | € 0.63 | € 6.30 |
| 500 - 990 | € 0.54 | € 5.40 |
| 1000+ | € 0.50 | € 5.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Length
2mm
Typical Gate Charge @ Vgs
5.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
2mm
Minimum Operating Temperature
-55 °C
Height
0.75mm
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products