onsemi UltraFET N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK RFD12N06RLESM9A
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Series
UltraFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Product details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 2,050.00
€ 0.82 Each (On a Reel of 2500) (Exc. VAT)
€ 2,419.00
€ 0.968 Each (On a Reel of 2500) (inc. VAT)
2500
€ 2,050.00
€ 0.82 Each (On a Reel of 2500) (Exc. VAT)
€ 2,419.00
€ 0.968 Each (On a Reel of 2500) (inc. VAT)
2500
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Series
UltraFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.39mm
Product details
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products