Panasonic DSK9J01Q0L N-Channel JFET, Idss 2 → 6.5mA, 3-Pin SSMini3 F3 B

RS Stock No.: 749-8277PBrand: PanasonicManufacturers Part No.: DSK9J01Q0L
brand-logo
View all in JFETs

Technical Document

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

2 → 6.5mA

Maximum Drain Gate Voltage

-55V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SSMini3 F3 B

Pin Count

3

Dimensions

1.6 x 0.85 x 0.7mm

Maximum Operating Temperature

+150 °C

Length

1.6mm

Height

0.7mm

Width

0.85mm

Country of Origin

China

Product details

N-channel JFET, Panasonic

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Panasonic DSK9J01Q0L N-Channel JFET, Idss 2 → 6.5mA, 3-Pin SSMini3 F3 B
Select packaging type

P.O.A.

Panasonic DSK9J01Q0L N-Channel JFET, Idss 2 → 6.5mA, 3-Pin SSMini3 F3 B
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

2 → 6.5mA

Maximum Drain Gate Voltage

-55V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SSMini3 F3 B

Pin Count

3

Dimensions

1.6 x 0.85 x 0.7mm

Maximum Operating Temperature

+150 °C

Length

1.6mm

Height

0.7mm

Width

0.85mm

Country of Origin

China

Product details

N-channel JFET, Panasonic

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.