Technical Document
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
300A
Maximum Drain Source Voltage Vds
1200V
Series
BSM
Mount Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation Pd
1875W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Length
152mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Stock information temporarily unavailable.
P.O.A.
Each (In a Tray of 4) (Exc. VAT)
4
P.O.A.
Each (In a Tray of 4) (Exc. VAT)
Stock information temporarily unavailable.
4
Technical Document
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
300A
Maximum Drain Source Voltage Vds
1200V
Series
BSM
Mount Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation Pd
1875W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Length
152mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature


