ROHM RGT16NS65DGC9, P-Channel IGBT, 16 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Technical Document
Specifications
Brand
ROHMMaximum Continuous Collector Current
16 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
30V
Maximum Power Dissipation
94 W
Number of Transistors
1
Package Type
TO-262
Mounting Type
Through Hole
Channel Type
P
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.1 x 4.5 x 9mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
450pF
Maximum Operating Temperature
+175 °C
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P.O.A.
5
P.O.A.
5
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Technical Document
Specifications
Brand
ROHMMaximum Continuous Collector Current
16 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
30V
Maximum Power Dissipation
94 W
Number of Transistors
1
Package Type
TO-262
Mounting Type
Through Hole
Channel Type
P
Pin Count
3+Tab
Transistor Configuration
Single
Dimensions
10.1 x 4.5 x 9mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
450pF
Maximum Operating Temperature
+175 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products