ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS Stock No.: 171-5593Brand: ROHMManufacturers Part No.: RGT30NS65DGC9
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Technical Document

Specifications

Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

133 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

Country of Origin

Japan

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€ 4.29

Each (In a Pack of 5) (Exc. Vat)

€ 5.062

Each (In a Pack of 5) (Including VAT)

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

€ 4.29

Each (In a Pack of 5) (Exc. Vat)

€ 5.062

Each (In a Pack of 5) (Including VAT)

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
5 - 45€ 4.29€ 21.45
50 - 95€ 3.90€ 19.50
100 - 245€ 3.60€ 18.00
250 - 495€ 3.36€ 16.80
500+€ 3.16€ 15.80

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Technical Document

Specifications

Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

133 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

Country of Origin

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more