ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS Stock No.: 171-5627Brand: ROHMManufacturers Part No.: RGT40NS65DGC9
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Technical Document

Specifications

Brand

ROHM

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

161 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1070pF

Maximum Operating Temperature

+175 °C

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P.O.A.

ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole

P.O.A.

ROHM RGT40NS65DGC9, P-Channel IGBT, 40 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

ROHM

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Maximum Power Dissipation

161 W

Number of Transistors

1

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1070pF

Maximum Operating Temperature

+175 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more