ROHM RQ5E035BN N-Channel MOSFET, 3.5 A, 30 V, 3-Pin TSMT-3 RQ5E035BNTCL
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Series
RQ5E035BN
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.8mm
Length
3mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 102.50
€ 0.41 Each (Supplied on a Reel) (Exc. VAT)
€ 120.95
€ 0.484 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
€ 102.50
€ 0.41 Each (Supplied on a Reel) (Exc. VAT)
€ 120.95
€ 0.484 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 250 - 450 | € 0.41 | € 20.50 |
| 500 - 2450 | € 0.41 | € 20.50 |
| 2500 - 4950 | € 0.41 | € 20.50 |
| 5000+ | € 0.41 | € 20.50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Series
RQ5E035BN
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.8mm
Length
3mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products