Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
0.44mm
Typical Power Gain
17 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
P.O.A.
Each (In a Pack of 5) (Exc. VAT)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
0.44mm
Typical Power Gain
17 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


