STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

RS Stock No.: 204-3957Brand: STMicroelectronicsManufacturers Part No.: SCTWA35N65G2V
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

€ 845.40

€ 28.18 Each (In a Tube of 30) (Exc. VAT)

€ 997.57

€ 33.252 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

30

Available in multiples of 30
30€ 845.40
60€ 1,690.80
90€ 2,536.20
120€ 3,381.60
150€ 4,227.00
180€ 5,072.40
210€ 5,917.80
240€ 6,763.20
270€ 7,608.60
300€ 8,454.00
330€ 9,299.40
360€ 10,144.80
390€ 10,990.20
420€ 11,835.60
450€ 12,681.00

€ 845.40

€ 28.18 Each (In a Tube of 30) (Exc. VAT)

€ 997.57

€ 33.252 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

Stock information temporarily unavailable.

30

Available in multiples of 30
30€ 845.40
60€ 1,690.80
90€ 2,536.20
120€ 3,381.60
150€ 4,227.00
180€ 5,072.40
210€ 5,917.80
240€ 6,763.20
270€ 7,608.60
300€ 8,454.00
330€ 9,299.40
360€ 10,144.80
390€ 10,990.20
420€ 11,835.60
450€ 12,681.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more