Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 66.50
€ 6.65 Each (Supplied on a Reel) (Exc. VAT)
€ 78.47
€ 7.847 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
€ 66.50
€ 6.65 Each (Supplied on a Reel) (Exc. VAT)
€ 78.47
€ 7.847 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
| Quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 24 | € 6.65 | € 13.30 |
| 26 - 98 | € 6.40 | € 12.80 |
| 100 - 498 | € 5.20 | € 10.40 |
| 500+ | € 4.67 | € 9.34 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


