STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

RS Stock No.: 687-5065PBrand: STMicroelectronicsManufacturers Part No.: STB120NF10T4
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Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

312W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

172nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 66.50

€ 6.65 Each (Supplied on a Reel) (Exc. VAT)

€ 78.47

€ 7.847 Each (Supplied on a Reel) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263
Select packaging type

€ 66.50

€ 6.65 Each (Supplied on a Reel) (Exc. VAT)

€ 78.47

€ 7.847 Each (Supplied on a Reel) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

Select packaging type

QuantityUnit pricePer Reel
10 - 24€ 6.65€ 13.30
26 - 98€ 6.40€ 12.80
100 - 498€ 5.20€ 10.40
500+€ 4.67€ 9.34

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

312W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

172nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more