Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 13.70
€ 2.74 Each (In a Pack of 5) (Exc. VAT)
€ 16.17
€ 3.233 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 13.70
€ 2.74 Each (In a Pack of 5) (Exc. VAT)
€ 16.17
€ 3.233 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 2.74 | € 13.70 |
| 25 - 45 | € 2.65 | € 13.25 |
| 50 - 120 | € 2.43 | € 12.15 |
| 125 - 245 | € 2.21 | € 11.05 |
| 250+ | € 2.14 | € 10.70 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


