STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STD80N4F6
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
DeepGate, STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 17.00
€ 1.70 Each (In a Pack of 10) (Exc. VAT)
€ 20.06
€ 2.006 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 17.00
€ 1.70 Each (In a Pack of 10) (Exc. VAT)
€ 20.06
€ 2.006 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 1.70 | € 17.00 |
| 50 - 90 | € 1.64 | € 16.40 |
| 100 - 240 | € 1.51 | € 15.10 |
| 250 - 490 | € 1.51 | € 15.10 |
| 500+ | € 1.48 | € 14.80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
DeepGate, STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products